Part Number Hot Search : 
VP1316N2 VVX332 N7782B 2SC3952 VHCT540 2SC32 2SB550 ODEL1
Product Description
Full Text Search
 

To Download SPN5001S23RGB Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  spn5001 description applications the spn5001 is the n-channel logic enhancement mode power field effect transistor which is produced with high voltage bicmos technology. this device is particularly suited for reducing the no load consumption in pc power, tv power and adapter. ? desk pc power supply ? ac adapter ? lcd tc power supply features pin configuration(sot-23) ? 600v/27ma , r ds(on) = 300 ? @v gs =10v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23 package design part marking 501yw yw: date code product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN5001S23RGB sot-23 501yw SPN5001S23RGB : tape reel ; pb ? free ; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 600 v gate ?source voltage - continuous v gss 20 v continuous drain current t a =25 i d 27 ma power dissipation t a =25 p d 0.5 w operating junction temperature t j -55 ~ 150 storage temperature range t stg -55 ~ 150 thermal resistance-junction to ambient r ja 250 /w spn5001 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 600 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 3.0 4.5 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =480v,v gs =0v t j =25 25 ua drain-source on-resistance r ds(on) v gs =10v,i d =16ma 300 ? forward transconductance gfs(1) v ds = 10 v, i d =16ma 28 ms dynamic total gate charge q g v dd = 200 v, i d = 0.1 a, v gs = 10 v 1.8 2.5 3.2 nc gate-source charge q gs 1.3 gate-drain charge q gd 0.8 input capacitance c iss v ds = 25 v, f = 1 mhz, v gs = 0 8.8 12.5 16.2 pf output capacitance c oss 7 10 13 reverse transfer capacitance c rss 5 7 9 turn-on time t d(on) v ds = 300 v, i d = 10m a r g = 3.3 ? v gs = 10.0 v r d = 30k ? 11.5 ns t r 14.5 turn-off time t d(off) 14 t f 120 spn5001 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com


▲Up To Search▲   

 
Price & Availability of SPN5001S23RGB

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X